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| Ordering number : ENA1110 15GN03NA SANYO Semiconductors DATA SHEET 15GN03NA Applications * NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications VHF, RF, MIXER, OSC, IF amplifier. Features * * High cutoff frequency : fT=1.5GHz typ. High gain : S21e2=11.5dB typ (f=0.4GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 400 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz 100 1.0 1.5 1.1 0.7 1.4 Conditions Ratings min typ max 0.1 1 180 GHz pF pF Unit A A Marking : ZC Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 42809AB MS IM TC-00001956 No. A1110-1/6 15GN03NA Continued from preceding page. Parameter Forward Transfer Gain Noise Figure Symbol S21e NF 2 Conditions VCE=5V, IC=20mA, f=0.4GHz VCE=3V, IC=2mA, f=0.4GHz Ratings min 9 typ 11.5 1.6 max Unit dB dB Package Dimensions unit : mm (typ) 7522-003 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 14.0 5.0 0.44 123 1 : Base 2 : Emitter 3 : Collector 1.3 1.3 SANYO : NP 100 90 IC -- VCE 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 80 70 IC -- VBE VCE=5V Collector Current, IC -- mA Collector Current, IC -- mA 80 70 60 50 40 30 20 10 0 0 2 4 6 60 50 40 30 20 10 0.2mA 0.1mA IBIB=0 =0mA 8 10 IT08105 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT08106 Collector-to-Emitter Voltage, VCE -- V 3 hFE -- IC Base-to-Emitter Voltage, VBE -- V 3 f T -- IC VCE=5V Gain-Bandwidth Product, f T -- GHz 2 2 VCE=5V DC Current Gain, hFE 100 1.0 7 7 5 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 100 IT08107 7 5 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 100 IT08108 No. A1110-2/6 15GN03NA 3 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz 3 Cre -- VCB f=1MHz Output Capacitance, Cob -- pF 2 2 1.0 1.0 7 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Base Voltage, VCB -- V 10 IT08109 14 NF -- IC Collector-to-Base Voltage, VCB -- V S21e 2 -- I IT08110 C 7 Forward Transfer Gain, S21e -- dB VCE=3V f=400MHz VCE=5V f=400MHz 12 Noise Figure, NF -- dB 5 2 10 3 50 Z S= 2 =Z ZS sop t 8 6 1.0 3 5 7 1.0 2 3 5 7 10 2 3 5 4 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 450 400 IT08112 PC -- Ta Collector Current, IC -- mA 7 100 IT08111 Collector Dissipation, PC -- mW 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT08113 No. A1110-3/6 15GN03NA S Parameters (Common emitter) VCE=5V, IC=1mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.911 0.789 0.667 0.581 0.530 0.516 0.524 0.544 0.569 0.599 S11 --38.35 --73.55 --105.98 --135.99 --163.88 170.66 149.05 130.45 114.61 101.73 S21 3.396 2.932 2.480 2.119 1.820 1.591 1.411 1.265 1.151 1.053 S21 150.54 125.94 105.39 88.18 73.68 61.24 50.19 40.26 31.22 23.11 S12 0.044 0.072 0.086 0.085 0.081 0.080 0.087 0.107 0.134 0.166 S12 67.89 50.24 38.97 33.03 35.93 44.02 54.80 61.94 66.13 65.91 S22 0.965 0.894 0.833 0.793 0.768 0.752 0.743 0.735 0.728 0.725 S22 --11.16 -19.16 -24.89 -29.61 -33.50 -38.35 -43.53 -49.30 -56.06 --64.11 VCE=5V, IC=3mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.734 0.520 0.412 0.374 0.369 0.390 0.416 0.447 0.481 0.513 S11 --62.22 --107.28 --142.46 --171.32 164.72 145.05 128.83 115.53 104.33 94.85 S21 7.688 5.350 3.906 3.088 2.527 2.157 1.893 1.691 1.531 1.405 S21 133.47 105.85 88.51 75.17 64.19 54.55 45.49 37.01 28.78 20.91 S12 0.037 0.051 0.060 0.069 0.080 0.096 0.116 0.138 0.165 0.196 S12 59.82 48.96 50.51 55.03 60.30 63.41 65.58 64.99 64.38 61.55 S22 0.876 0.764 0.718 0.693 0.683 0.673 0.666 0.654 0.644 0.633 S22 -15.78 -20.74 -23.92 -27.48 -31.29 -36.13 -41.49 -47.20 -53.59 -61.70 VCE=5V, IC=5mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.601 0.401 0.330 0.316 0.328 0.355 0.385 0.416 0.451 0.488 S11 --77.46 --124.33 --158.33 174.70 153.64 136.94 122.98 111.48 101.75 93.45 S21 10.083 6.214 4.368 3.384 2.764 2.346 2.058 1.842 1.668 1.525 S21 123.30 97.86 82.77 71.30 61.57 52.55 44.10 35.87 28.07 20.21 S12 0.032 0.045 0.056 0.069 0.085 0.104 0.126 0.149 0.175 0.202 S12 58.18 55.73 60.17 63.56 65.89 67.02 67.31 65.15 62.95 59.91 S22 0.813 0.710 0.677 0.661 0.654 0.644 0.636 0.624 0.612 0.598 S22 -17.09 -19.74 -22.45 -26.09 -29.88 -35.07 -40.45 -46.16 -52.85 -60.59 VCE=5V, IC=10mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.418 0.289 0.263 0.272 0.294 0.323 0.356 0.390 0.428 0.465 S11 --98.93 --145.70 --176.64 160.88 143.46 129.85 118.38 108.55 100.12 92.70 S21 12.653 7.004 4.795 3.684 3.003 2.541 2.230 1.995 1.804 1.655 S21 110.98 90.22 77.68 67.70 58.71 50.56 42.41 34.57 26.83 19.00 S12 0.025 0.041 0.056 0.075 0.092 0.113 0.134 0.157 0.183 0.210 S12 61.57 65.66 68.69 69.86 69.86 68.29 66.15 64.16 61.23 58.00 S22 0.726 0.657 0.639 0.629 0.623 0.613 0.606 0.591 0.578 0.561 S22 -16.94 -17.68 -20.61 -24.59 -28.71 -33.65 -39.34 -45.22 -51.67 -59.46 No. A1110-4/6 15GN03NA S Parameters (Common emitter) VCE=5V, IC=15mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.336 0.251 0.243 0.259 0.282 0.315 0.349 0.382 0.423 0.461 S11 -111.37 -156.52 175.36 155.17 139.97 127.91 117.19 108.15 100.27 93.31 S21 13.633 7.291 4.950 3.804 3.085 2.623 2.294 2.051 1.857 1.699 S21 105.51 87.18 75.58 66.12 57.58 49.47 41.46 33.59 25.77 18.04 S12 0.023 0.039 0.058 0.075 0.096 0.116 0.139 0.162 0.186 0.213 S12 66.42 68.50 72.23 71.30 70.72 68.73 66.53 63.69 60.44 56.83 S22 0.689 0.638 0.624 0.615 0.610 0.599 0.589 0.576 0.561 0.543 S22 --16.01 --16.50 --19.64 --23.84 --28.09 --33.22 --38.91 --44.65 --51.26 --58.90 VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.295 0.236 0.236 0.252 0.279 0.311 0.348 0.382 0.422 0.463 S11 --119.70 -163.17 171.09 153.03 138.70 127.43 117.20 108.37 100.51 93.56 S21 14.064 7.419 5.038 3.857 3.134 2.662 2.322 2.076 1.875 1.717 S21 102.72 85.53 74.53 65.19 56.66 48.69 40.64 32.72 24.96 17.22 S12 0.023 0.040 0.057 0.077 0.097 0.118 0.139 0.163 0.187 0.214 S12 68.43 72.56 73.42 71.74 70.80 69.12 66.53 63.36 59.97 56.66 S22 0.670 0.627 0.613 0.606 0.600 0.590 0.582 0.567 0.553 0.534 S22 --15.25 --15.71 --19.17 --23.55 --27.92 --32.97 --38.63 --44.57 --50.89 --58.57 VCE=5V, IC=30mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.255 0.228 0.235 0.257 0.284 0.319 0.355 0.391 0.432 0.476 S11 -132.18 -171.53 166.38 150.61 137.65 127.33 117.59 108.78 100.94 93.96 S21 14.413 7.502 5.066 3.881 3.149 2.670 2.329 2.078 1.873 1.712 S21 99.45 83.61 72.97 63.80 55.32 47.24 39.18 31.33 23.50 15.58 S12 0.022 0.040 0.059 0.079 0.099 0.119 0.142 0.165 0.188 0.214 S12 72.81 75.43 74.03 73.36 71.09 68.99 66.19 62.94 59.89 56.33 S22 0.646 0.614 0.604 0.597 0.592 0.582 0.574 0.559 0.544 0.527 S22 --14.31 --14.88 --18.31 --23.02 --27.40 --32.58 --38.29 --44.08 --50.63 --58.36 VCE=5V, IC=50mA, ZO=50 Freq(MHz) 100 200 300 400 500 600 700 800 900 1000 S11 0.245 0.244 0.258 0.284 0.314 0.349 0.390 0.427 0.472 0.513 S11 -148.53 -179.65 162.46 149.02 137.48 127.61 117.90 109.32 101.47 94.18 S21 14.210 7.331 4.937 3.773 3.057 2.577 2.248 1.996 1.796 1.633 S21 96.44 81.36 70.79 61.59 52.94 44.66 36.55 28.38 20.36 12.42 S12 0.023 0.041 0.060 0.081 0.101 0.122 0.144 0.169 0.193 0.219 S12 73.67 76.18 75.61 73.24 71.86 68.97 65.54 63.25 60.00 56.02 S22 0.625 0.600 0.592 0.585 0.583 0.573 0.565 0.549 0.536 0.516 S22 --13.18 --14.33 -18.11 --22.99 --27.31 --32.63 --38.50 --44.65 --51.23 --59.35 No. A1110-5/6 15GN03NA SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2009. Specifications and information herein are subject to change without notice. PS No. A1110-6/6 |
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